Invention Grant
- Patent Title: Semiconductor device having electrode made of high work function material, method and apparatus for manufacturing the same
- Patent Title (中): 具有由高功函数材料制成的电极的半导体器件，其制造方法和装置
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Application No.: US14629345Application Date: 2015-02-23
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Publication No.: US09437704B2Publication Date: 2016-09-06
- Inventor: Sadayoshi Horii , Arito Ogawa , Hideharu Itatani
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2010-002256 20100107
- Main IPC: H01L29/49
- IPC: H01L29/49 ; C23C16/06 ; C23C16/34 ; C23C16/455 ; H01L21/28 ; H01L49/02 ; H01L29/51 ; H01L21/768 ; H01L23/522
Abstract:
Provided is a semiconductor device including a metal film which can be formed with lower costs but still mange to have a necessary work function and oxidation resistance. The semiconductor device includes an insulating film disposed on a substrate; and a metal film disposed on the insulating film. The metal film includes a stacked structure of: a first metal film disposed on the insulating film to directly contact the insulating film; a second metal film disposed on the first metal film to directly contact the first metal film; and the first metal film disposed on the second metal film to directly contact the second metal film, the second metal film having a work function greater than 4.8 eV and being different from the first metal film in material, wherein an oxidation resistance of the first metal film is greater than that of the second metal film.
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