Gate metal is selectively deposited on work function material during formation of a replacement metal gate. The work function material is subjected to a hydrogen-based surface treatment to enable the subsequent selective deposition of the gate metal. Work function materials including titanium nitride and tantalum nitride may be processed to facilitate the selective deposition of gate metals, thereby simplifying the gate fabrication process by eliminating the need for subjecting the gate metal to a reactive ion etch or chemical mechanical planarization prior to formation of a dielectric cap.