Invention Grant
US09437721B2 Reverse-conducting IGBT with buffer layer and separation layer for reducing snapback
有权
具有缓冲层和分离层的反向导通IGBT，用于减少快速恢复
- Patent Title: Reverse-conducting IGBT with buffer layer and separation layer for reducing snapback
- Patent Title (中): 具有缓冲层和分离层的反向导通IGBT，用于减少快速恢复
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Application No.: US14964772Application Date: 2015-12-10
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Publication No.: US09437721B2Publication Date: 2016-09-06
- Inventor: Tetsuo Takahashi
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2013-243938 20131126
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L29/08 ; H01L29/10 ; H01L29/739 ; H01L29/66 ; H01L27/06 ; H01L49/02 ; H01L29/06 ; H01L29/417
Abstract:
In the reverse-conducting IGBT according to the present invention, an n-type buffer layer surrounds a p-type collector layer. A p-type separation layer surrounds an n-type cathode layer. The n-type buffer layer separates the p-type collector layer and the p-type separation layer from each other. The p-type separation layer separates the n-type cathode layer and the n-type buffer layer from each other. Therefore, the present invention makes it possible to reduce snapback.
Public/Granted literature
- US20160093725A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-03-31
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