Semiconductor device using three dimensional channel

Invention Grant

US09437730B2 Semiconductor device using three dimensional channel 有权

Title translation: 半导体器件采用三维通道

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Patent Title: Semiconductor device using three dimensional channel
Patent Title (中): 半导体器件采用三维通道
Application No.: US14803265

Application Date: 2015-07-20
Publication No.: US09437730B2

Publication Date: 2016-09-06
Inventor: Kwan-Young Kim , Jae-Hyun Yoo , Jin-Hyun Noh , Woo-Yeol Maeng , Yong-Woo Jeon
Applicant: Kwan-Young Kim , Jae-Hyun Yoo , Jin-Hyun Noh , Woo-Yeol Maeng , Yong-Woo Jeon
Applicant Address: KR Gyeonggi-do
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Gyeonggi-do
Agency: Harness, Dickey & Pierce, P.L.C.
Priority: KR10-2014-0163378 20141121
Main IPC: H01L29/78
IPC: H01L29/78 ; H01L29/06 ; H01L29/423 ; H01L29/08 ; H01L27/088

Semiconductor device using three dimensional channel

Abstract:

According to example embodiments, a semiconductor device includes a first fin, a second fin that is separated from the first fin, and a gate on the first fin and the second fin. The gate crosses the first fin and the second fin. The first fin includes a first doped area at both sides of the gate. The first doped area is configured to have a first voltage applied thereto. The second fin includes a second doped area at both sides of the gate. The second doped area is configured to have a second voltage applied thereto. The second voltage is different than the first voltage.

Abstract(Chinese):

根据示例性实施例，半导体器件包括第一鳍片，与第一鳍片分离的第二鳍片和第一鳍片和第二鳍片上的栅极。门穿过第一鳍和第二鳍。第一鳍片包括在栅极两侧的第一掺杂区域。第一掺杂区被配置为具有施加到其上的第一电压。第二鳍片包括在栅极两侧的第二掺杂区域。第二掺杂区被配置为具有施加到其上的第二电压。第二电压不同于第一电压。

Public/Granted literature

US20160149030A1 SEMICONDUCTOR DEVICE USING THREE DIMENSIONAL CHANNEL Public/Granted day:2016-05-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的