Invention Grant
- Patent Title: Semiconductor device with protective films and manufacturing method thereof
- Patent Title (中): 具有保护膜的半导体器件及其制造方法
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Application No.: US13196984Application Date: 2011-08-03
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Publication No.: US09437734B2Publication Date: 2016-09-06
- Inventor: Kiyotaka Yonekawa
- Applicant: Kiyotaka Yonekawa
- Applicant Address: JP Yokohama
- Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee: LAPIS SEMICONDUCTOR CO., LTD.
- Current Assignee Address: JP Yokohama
- Agency: Rabin & Berdo, P.C.
- Priority: JP2010-180092 20100811
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/02 ; H01L23/29 ; H01L23/31 ; H01L29/40 ; H01L29/66
Abstract:
A semiconductor device includes a semiconductor substrate having a drain region, a source region and an impurity diffusion region; an oxide film formed on the impurity diffusion region; a first protective film including a SiN film as a principal component and being formed on the oxide film; and a second protective film containing carbon and being formed on the first protective film. A method of manufacturing the semiconductor device, includes doping an impurity into a semiconductor substrate, thereby forming a drain region, a source region and an impurity diffusion region; forming an oxide film on the impurity diffusion region; forming a first protective film including a SiN film as a principal component on the oxide film; and forming a second protective film containing carbon on the first protective film.
Public/Granted literature
- US20120037963A1 SEMICONDUCTOR DEVICE WITH PROTECTIVE FILMS AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-02-16
Information query
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