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US09437759B2 Germanium metal-contact-free near-IR photodetector 有权
锗金属接触近红外光电探测器

Germanium metal-contact-free near-IR photodetector
Abstract:
A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at −4 V reverse bias. 3-dB bandwidth is 30 GHz.
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