Invention Grant
- Patent Title: Semiconductor light-emitting element and method for producing the same
- Patent Title (中): 半导体发光元件及其制造方法
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Application No.: US14561968Application Date: 2014-12-05
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Publication No.: US09437778B2Publication Date: 2016-09-06
- Inventor: Takahiro Inoue , Masashi Tsukihara , Kohei Miyoshi
- Applicant: USHIO DENKI KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: USHIO DENKI KABUSHIKI KAISHA
- Current Assignee: USHIO DENKI KABUSHIKI KAISHA
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2013-258350 20131213
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/40 ; H01L33/14

Abstract:
The semiconductor light-emitting element includes: a substrate; a semiconductor layer that is provided over the substrate; a first electrode that is provided in contact with part of an upper surface of the semiconductor layer and includes a current supply part; a second electrode that is provided in part of a region vertically below a region where the current supply part is not provided, that is in contact with part of the semiconductor layer; and a first current blocking layer that is provided in a region including a region vertically below the current supply part and that is in contact with part of the semiconductor layer, wherein a contact resistance at an interface between the first current blocking layer and the semiconductor layer is higher than that at an interface between the second electrode and the semiconductor layer.
Public/Granted literature
- US20150171271A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME Public/Granted day:2015-06-18
Information query
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