Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US14361216Application Date: 2013-05-29
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Publication No.: US09437787B2Publication Date: 2016-09-06
- Inventor: Takeshi Kamikawa
- Applicant: Sharp Kabushiki Kaisha
- Applicant Address: JP Osaka-Shi
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Osaka-Shi
- Agency: Morris & Foerster LLP
- Priority: JP2012-136538 20120618
- International Application: PCT/JP2013/064909 WO 20130529
- International Announcement: WO2013/190962 WO 20131227
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/50 ; H01L23/00 ; H01L33/56 ; H01L33/60 ; H01L33/48 ; H01L33/64

Abstract:
A semiconductor light emitting device includes: a semiconductor light emitting element including a transparent substrate; a reflective substrate on which the semiconductor light emitting element is mounted; an adhesive layer containing a fluorescent substance, for fixing the semiconductor light emitting element on the reflective substrate; and a sealing member containing a fluorescent substance, for sealing the semiconductor light emitting element. In the semiconductor light emitting device, the adhesive layer has a thickness equal to or smaller than average particle size of the fluorescent substance contained in the sealing member.
Public/Granted literature
- US20140353704A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2014-12-04
Information query
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