A method for fabricating a flip chip light emitting diode (FCLED) die includes forming an epitaxial stack on a carrier substrate having an n-type confinement layer, a multiple quantum well (MQW) layer, and a p-type confinement layer, forming a mirror layer on the p-type confinement layer, forming an n-trench in the n-type confinement layer, forming an n-conductor layer in the n-trench on the n-type confinement layer, forming a p-metal layer on the p-type confinement layer, forming a first electrical isolator layer on the n-conductor layer and a second electrical isolator layer on the p-metal layer, forming a p-pad on the first electrical isolator layer, and forming an n-pad the second electrical isolator layer.