Invention Grant
- Patent Title: Magnetoresistive element and magnetic memory
- Patent Title (中): 磁阻元件和磁记忆体
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Application No.: US14193340Application Date: 2014-02-28
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Publication No.: US09437810B2Publication Date: 2016-09-06
- Inventor: Eiji Kitagawa , Takao Ochiai , Kay Yakushiji , Makoto Konoto , Hitoshi Kubota , Shinji Yuasa , Takayuki Nozaki , Akio Fukushima
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-051933 20130314
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/10 ; H01L43/08 ; H01L27/22
Abstract:
According to one embodiment, a magnetoresistive element includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having an invariable magnetization direction; and a tunnel barrier layer provided between the first magnetic layer and the second magnetic layer and including an MgFeO film, wherein the MgFeO film contains at least one element selected from a group consisting of Ti, V, Mn, and Cu.
Public/Granted literature
- US20140264673A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY Public/Granted day:2014-09-18
Information query
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