In one embodiment, a resistive switching memory device can include: (i) a plurality of resistive memory cells arranged in a plurality of array blocks, where each resistive memory cell is configured to be programmed to a low resistance state by application of a program voltage in a forward bias direction, and to be erased to a high resistance state by application of an erase voltage in a reverse bias direction; (ii) a plurality of anode plates corresponding to the plurality of array blocks, where each resistive memory cell can include a resistive storage element having an anode coupled to one of the anode plates; (iii) an inactive ring surrounding the plurality of anode plates, where the inactive ring can include a same material as each of the plurality of anode plates; and (iv) a plurality of boundary cells located under the inactive ring.