Invention Grant
- Patent Title: Donor substrate and method for forming transfer pattern using the same
-
Application No.: US14791635Application Date: 2015-07-06
-
Publication No.: US09437819B2Publication Date: 2016-09-06
- Inventor: YoungGil Kwon
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin-Si, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2013-0060490 20130528
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L51/00 ; H01L51/56 ; B41M5/42 ; B41M5/44 ; B41M5/46 ; H01L27/32 ; H01L51/50
Abstract:
A donor substrate includes a base layer, a light-to-heat conversion layer disposed on the base layer, a buffer layer disposed on the light-to-heat conversion layer and a transfer layer disposed on the buffer layer. The buffer layer includes a cross-linked polymer, a spacer polymer bonded to the cross-linked polymer, and a perfluoroalkyl alcohol group bonded to the spacer polymer.
Public/Granted literature
- US20160020398A1 DONOR SUBSTRATE AND METHOD FOR FORMING TRANSFER PATTERN USING THE SAME Public/Granted day:2016-01-21
Information query
IPC分类:
