Invention Grant
- Patent Title: Light-emitting transistors with improved performance
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Application No.: US14817203Application Date: 2015-08-03
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Publication No.: US09437842B2Publication Date: 2016-09-06
- Inventor: Antonio Facchetti
- Applicant: Polyera Corporation
- Applicant Address: US IL Skokie
- Assignee: Polyera Corporation
- Current Assignee: Polyera Corporation
- Current Assignee Address: US IL Skokie
- Agent Karen K. Chan
- Main IPC: H01L51/52
- IPC: H01L51/52 ; H01L33/00 ; H01L51/50 ; H01L51/00
Abstract:
Disclosed are light-emitting transistors having novel structures that can lead to enhanced device brightness, specifically, via incorporation of additional electrically insulating components that can favor charge localization and in turn, carrier recombination and exciton formation.
Public/Granted literature
- US20160036007A1 Light-Emitting Transistors with Improved Performance Public/Granted day:2016-02-04
Information query
IPC分类:
