Invention Grant
- Patent Title: Vertical cavity surface emmiting laser
- Patent Title (中): 垂直腔表面发射激光
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Application No.: US14678414Application Date: 2015-04-03
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Publication No.: US09438010B1Publication Date: 2016-09-06
- Inventor: Babu Dayal Padullaparthi
- Applicant: SAE Magnetics (H.K.) Ltd.
- Applicant Address: CN Hong Kong
- Assignee: SAE Magnetics (H.K.) Ltd.
- Current Assignee: SAE Magnetics (H.K.) Ltd.
- Current Assignee Address: CN Hong Kong
- Agency: Nixon & Vanderhye PC
- Priority: CN201510124564 20150320
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/187 ; H01S5/343 ; H01S5/34 ; H01S5/183
Abstract:
A VCSEL according to the invention, configured to emit a light having about 850 nm wavelength, comprises an active region which comprises one or more InxGa1-xAs quantum wells; two or more GaAs1-yPy barriers bonding to the one or more quantum wells; and x ranges from 0.05 to 0.1, and y ranges from 0.2 to 0.29. The VCSEL has increased optical confinement and high transmission speed, good reliability characteristics, high-temperature performance, and long life time.
Public/Granted literature
- US20160276805A1 VERTICAL CAVITY SURFACE EMMITING LASER Public/Granted day:2016-09-22
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