Invention Grant
- Patent Title: Power amplifier
- Patent Title (中): 功率放大器
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Application No.: US14486672Application Date: 2014-09-15
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Publication No.: US09438170B2Publication Date: 2016-09-06
- Inventor: Jun-De Jin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H03F3/45
- IPC: H03F3/45 ; H03F3/21 ; H03F3/04 ; H03F1/02 ; H03F3/19

Abstract:
A power amplifier includes an input circuit configured to receive an input signal. At least two transistors connected in series. A first transistor of the at least two transistors is located at a first end of the at least two transistors. A second transistor of the at least two transistors is located at a second end of the at least two transistors. The first transistor is coupled to a low voltage power supply node. The first gate of the first transistor is coupled to a first bias voltage. The input signal is coupled to a first gate of the first transistor. At least one capacitor is coupled between a second gate of the second transistor and the low voltage power supply node. An output circuit coupled to a second gate of the second transistor.
Public/Granted literature
- US20160079923A1 Power Amplifier Public/Granted day:2016-03-17
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