Invention Grant
US09438210B1 Semiconductor devices employing a data inversion scheme for improved input/output characteristics 有权
采用数据反演方案改善输入/输出特性的半导体器件

  • Patent Title: Semiconductor devices employing a data inversion scheme for improved input/output characteristics
  • Patent Title (中): 采用数据反演方案改善输入/输出特性的半导体器件
  • Application No.: US14808060
    Application Date: 2015-07-24
  • Publication No.: US09438210B1
    Publication Date: 2016-09-06
  • Inventor: Young Jun Yoon
  • Applicant: SK hynix Inc.
  • Applicant Address: KR Icheon-si, Gyeonggi-do
  • Assignee: SK hynix Inc.
  • Current Assignee: SK hynix Inc.
  • Current Assignee Address: KR Icheon-si, Gyeonggi-do
  • Agency: William Park & Associates Ltd.
  • Priority: KR10-2015-0045750 20150331
  • Main IPC: H03K3/037
  • IPC: H03K3/037
Semiconductor devices employing a data inversion scheme for improved input/output characteristics
Abstract:
A semiconductor device may include a data output circuit and a control signal output circuit. The data output circuit may compare a first input signal or a second input signal with a storage datum to generate a first comparison selection signal and may compare the first input signal with the second input signal to generate a second comparison selection signal. The control signal output circuit may detect logic levels of bits included in the first and second comparison selection signals to generate first and second detection signals, generate first and second flag signals from the first and second detection signals in response to a storage flag signal, and sequentially output the first and second flag signals as transmission control signals.
Information query
Patent Agency Ranking
0/0