Invention Grant
US09440312B2 Laser ablation process for manufacturing submounts for laser diode and laser diode units
有权
用于制造激光二极管和激光二极管单元的基座的激光烧蚀工艺
- Patent Title: Laser ablation process for manufacturing submounts for laser diode and laser diode units
- Patent Title (中): 用于制造激光二极管和激光二极管单元的基座的激光烧蚀工艺
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Application No.: US13904174Application Date: 2013-05-29
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Publication No.: US09440312B2Publication Date: 2016-09-13
- Inventor: Alexander Ovtchinnikov , Igor Berishev , Alexey Komissarov , Svletan Todorov , Pavel Trubenko
- Applicant: Alexander Ovtchinnikov , Igor Berishev , Alexey Komissarov , Svletan Todorov , Pavel Trubenko
- Applicant Address: US MA Oxford
- Assignee: IPG PHOTONICS CORPORATION
- Current Assignee: IPG PHOTONICS CORPORATION
- Current Assignee Address: US MA Oxford
- Agent Yuri Kateshov, Esq.; Timothy J. King, Esq.
- Main IPC: B23K26/00
- IPC: B23K26/00 ; B23K26/36 ; B23K26/40 ; H05K3/00 ; H01L23/00 ; H01S5/022

Abstract:
A method for manufacturing submounts for laser diodes includes the steps of providing a base configured with a ceramic carrier and a metal layer deposited upon the substrate. The method further includes using a pulsed laser operative to generate a plurality of pulses which are selectively trained at predetermined pattern on the metal layer's surface so as to ablate the desired regions of the metal layer to the desired depth. Thereafter the base is divided into a plurality of submounts each supporting a laser diode. The metal layer includes a silver sub-layer deposited upon the ceramic and having a thickness sufficient to effectively facilitate heat dissipation.
Public/Granted literature
- US20140353362A1 Laser Ablation Process for Manufacturing Submounts for Laser Diode and Laser Diode Units Public/Granted day:2014-12-04
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