A method of manufacturing a sealed structure with excellent hermeticity and a method of manufacturing a light-emitting device sealed with the sealed structure. In the methods of manufacturing a sealed structure and a light-emitting device using a glass frit layer, a first step of forming a buffer layer for preventing a crack generated in a substrate and the glass frit layer by laser light irradiation, a second step of forming the glass frit layer to overlap with the buffer layer over the substrate, and a third step of welding the substrates by irradiating the glass frit layer or the buffer layer with laser light are performed, whereby a sealed structure with high hermeticity and a reliable light-emitting device sealed with the sealed structure can be manufactured. By applying the method of manufacturing a light-emitting device especially to an organic EL element, a highly reliable light-emitting device can be obtained.