Invention Grant
US09442067B2 Plasmon sensor and manufacturing method therefor, and method for inserting sample into plasmon sensor
有权
等离子体传感器及其制造方法以及将样品插入等离子体传感器的方法
- Patent Title: Plasmon sensor and manufacturing method therefor, and method for inserting sample into plasmon sensor
- Patent Title (中): 等离子体传感器及其制造方法以及将样品插入等离子体传感器的方法
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Application No.: US13260444Application Date: 2010-04-20
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Publication No.: US09442067B2Publication Date: 2016-09-13
- Inventor: Masaya Tamura , Hiroshi Kagata
- Applicant: Masaya Tamura , Hiroshi Kagata
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: RatnerPrestia
- Priority: JP2009-102589 20090421; JP2009-234769 20091009
- International Application: PCT/JP2010/002833 WO 20100420
- International Announcement: WO2010/122776 WO 20101028
- Main IPC: G01N21/552
- IPC: G01N21/552 ; G01N33/543
Abstract:
A plasmon sensor includes a first metal layer and a second metal layer having an upper surface facing a lower surface of the first metal layer. The upper surface of the first metal layer is configured to receive an electromagnetic wave. A hollow space is provided between the first and second metal layers, and is configured to be filled with a test sample containing a medium. This plasmon sensor has a small size and a simple structure.
Public/Granted literature
- US20120028247A1 PLASMON SENSOR AND MANUFACTURING METHOD THEREFOR, AND METHOD FOR INSERTING SAMPLE INTO PLASMON SENSOR Public/Granted day:2012-02-02
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