Invention Grant
US09442371B2 Method of producing structure containing phase-separated structure, method of forming pattern and method of forming fine pattern
有权
含有相分离结构的结构的制造方法，形成图案的方法和形成精细图案的方法
- Patent Title: Method of producing structure containing phase-separated structure, method of forming pattern and method of forming fine pattern
- Patent Title (中): 含有相分离结构的结构的制造方法，形成图案的方法和形成精细图案的方法
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Application No.: US14603106Application Date: 2015-01-22
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Publication No.: US09442371B2Publication Date: 2016-09-13
- Inventor: Takehiro Seshimo , Takaya Maehashi , Takahiro Dazai , Yoshiyuki Utsumi , Tasuku Matsumiya , Ken Miyagi , Daiju Shiono , Tsuyoshi Kurosawa
- Applicant: Tokyo Ohka Kogyo Co., Ltd.
- Applicant Address: JP Kawasaki-Shi
- Assignee: TOKYO OHKA KOGYO CO., LTD.
- Current Assignee: TOKYO OHKA KOGYO CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: JP2014-010688 20140123
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/00 ; G03F7/11 ; G03F7/20 ; G03F7/16 ; G03F7/36 ; G03F7/38 ; C09D153/00 ; C09D183/10 ; B82Y40/00 ; B81C1/00 ; C08G18/61 ; G03F7/075
Abstract:
A method of producing a structure containing a phase-separated structure, including a step in which a layer including an Si-containing block copolymer having a plurality of blocks bonded is formed between guide patterns on a substrate; a step in which a solution of a top coat material is applied to the layer and the guide patterns so as to form a top coat film; and a step in which the layer including the Si-containing block copolymer and having the top coat film formed thereon is subjected to annealing treatment so as to conduct a phase separation of the layer; in which a solvent of the solution of the top coat material contains no basic substance.
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