Cyclical, non-isobaric, pore sealing method to prevent precursor penetration into the substrate

Invention Grant

US09443722B1 Cyclical, non-isobaric, pore sealing method to prevent precursor penetration into the substrate 有权

Title translation: 循环，非等压，孔密封方法，以防止前体渗入基体

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Patent Title: Cyclical, non-isobaric, pore sealing method to prevent precursor penetration into the substrate
Patent Title (中): 循环，非等压，孔密封方法，以防止前体渗入基体
Application No.: US14675701

Application Date: 2015-03-31
Publication No.: US09443722B1

Publication Date: 2016-09-13
Inventor: Karl F. Leeser
Applicant: Lam Research Corporation
Applicant Address: US CA Fremont
Assignee: Lam Research Corporation
Current Assignee: Lam Research Corporation
Current Assignee Address: US CA Fremont
Agency: Martine Penilla Group, LLP
Main IPC: H01L21/31
IPC: H01L21/31 ; H01L21/02

Cyclical, non-isobaric, pore sealing method to prevent precursor penetration into the substrate

Abstract:

A method for processing a substrate using a plasma chamber. The method includes providing the substrate on a pedestal of the plasma chamber, the substrate having a material layer that has a porous structure and a least one feature formed in the material layer that exposes one or more open pores of the porous structure. The method further includes introducing an inert gas into the plasma chamber so that a pressure of the plasma chamber is increased to a first pressure that is higher than an average process pressure used for depositing a thin film, wherein increasing to the first pressure causes at least some of the inert gas to migrate into the one or more open pores of the porous structure of the material layer and decreasing the pressure of the plasma chamber to a second pressure that is lower than the average process pressure used for depositing the thin film, wherein decreasing the pressure to the second pressure causes at least some of the inert gas in the material layer to outgas from the one or more open pores. The method then includes depositing the thin film over the material layer and the feature formed in the material layer simultaneously while the inert gas outgases from the one or more open pores of the material layer to seal the one or more open pores while the inert gas outgases.

Abstract(Chinese):

一种使用等离子体室处理衬底的方法。该方法包括将基板设置在等离子体室的基座上，该基板具有具有多孔结构的材料层和在材料层中形成的暴露多孔结构的一个或多个开孔的至少一个特征。该方法还包括将惰性气体引入等离子体室，使得等离子体室的压力增加到高于用于沉积薄膜的平均工艺压力的第一压力，其中增加到第一压力至少导致一些惰性气体迁移到材料层的多孔结构的一个或多个开孔中，并将等离子体室的压力降低到低于用于沉积薄膜的平均过程压力的第二压力，其中减小到第二压力的压力导致材料层中的至少一些惰性气体从一个或多个开孔排出。该方法然后包括将薄膜沉积在材料层上并同时形成在材料层中的特征，同时惰性气体从材料层的一个或多个开孔排出，以密封一个或多个开孔，同时惰性气体。

Public/Granted literature

US20160293411A1 CYCLICAL, NON-ISOBARIC, PORE SEALING METHOD TO PREVENT PRECURSOR PENETRATION INTO THE SUBSTRATE Public/Granted day:2016-10-06

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择