Modification processing method and method of manufacturing semiconductor device

Invention Grant

US09443724B2 Modification processing method and method of manufacturing semiconductor device 有权

Title translation: 半导体器件的制造方法及其制造方法

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Patent Title: Modification processing method and method of manufacturing semiconductor device
Patent Title (中): 半导体器件的制造方法及其制造方法
Application No.: US14725656

Application Date: 2015-05-29
Publication No.: US09443724B2

Publication Date: 2016-09-13
Inventor: Tamotsu Morimoto , Yusuke Muraki , Kazuaki Nishimura
Applicant: TOKYO ELECTRON LIMITED
Applicant Address: JP Tokyo
Assignee: Tokyo Electron Limited
Current Assignee: Tokyo Electron Limited
Current Assignee Address: JP Tokyo
Agency: Nath, Goldberg & Meyer
Agent Jerald L. Meyer
Priority: JP2014-118271 20140609
Main IPC: H01L21/311
IPC: H01L21/311 ; H01L21/02 ; H01L21/768

Modification processing method and method of manufacturing semiconductor device

Abstract:

A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas.

Abstract(Chinese):

修改处理方法包括制备具有通过等离子体处理形成有损伤层的硅层的基板。该方法还包括通过用含氟气体的第一工艺气体处理衬底来去除形成在硅层上的损伤层。

Public/Granted literature

US20150357187A1 MODIFICATION PROCESSING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2015-12-10

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀