Invention Grant
- Patent Title: Semiconductor device and method of manufacturing semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14247973Application Date: 2014-04-08
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Publication No.: US09443774B2Publication Date: 2016-09-13
- Inventor: Tomonori Mizushima , Yusuke Kobayashi
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Priority: JP2011-249982 20111115
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L29/10 ; H01L21/66 ; H01L29/32 ; H01L29/36 ; H01L29/66 ; H01L29/861 ; H01L29/739 ; H01L21/263 ; H01L21/265 ; H01L21/324 ; H01L29/06
Abstract:
A donor layer that is formed by performing a heat treatment for a crystal defect formed by proton radiation is provided in an n-type drift layer of an n− semiconductor substrate. The donor layer has an impurity concentration distribution including a portion with the maximum impurity concentration and a portion with a concentration gradient in which the impurity concentration is reduce to the same impurity concentration as that of the n-type drift layer in a direction from the portion with the maximum impurity concentration to both surfaces of the n-type drift layer. The crystal defect formed in the n-type drift layer is a composite crystal defect mainly caused by a vacancy, oxygen, and hydrogen.
Public/Granted literature
- US20140217407A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-08-07
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