Invention Grant
US09443792B1 Bridging DMB structure for wire bonding in a power semiconductor device module
有权
在功率半导体器件模块中连接用于引线键合的DMB结构
- Patent Title: Bridging DMB structure for wire bonding in a power semiconductor device module
- Patent Title (中): 在功率半导体器件模块中连接用于引线键合的DMB结构
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Application No.: US14929308Application Date: 2015-10-31
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Publication No.: US09443792B1Publication Date: 2016-09-13
- Inventor: Thomas Spann , Ira Balaj-Loos
- Applicant: IXYS Corporation
- Applicant Address: US CA Milpitas
- Assignee: IXYS Corporation
- Current Assignee: IXYS Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Imperium Patent Works
- Agent T. Lester Wallace
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
A power module includes a substrate DMB (Direct Metal Bonded). A novel bridging DMB is surface mounted to the substrate DMB along with power semiconductor device dice. The top metal layer of the bridging DMB has one or more islands to which bonding wires can connect. In one example, an electrical path extends from a module terminal, through a first bonding wire and to a first location on a strip-shaped island, through the island to a second location, and from the second location and through a second bonding wire. The strip-shaped island of the bridging DMB serves as a section of the overall electrical path. Another bonding wire of a separate electrical path passes transversely over the strip-shaped island without any wire crossing any other wire. Use of the bridging DMB promotes bonding wire mechanical strength as well as heat sinking from bonding wires down to the substrate DMB.
Information query
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