Invention Grant
- Patent Title: Semiconductor device and method for manufacturing a semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14020117Application Date: 2013-09-06
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Publication No.: US09443807B2Publication Date: 2016-09-13
- Inventor: Markus Zundel , Thomas Ostermann
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L23/544 ; H01L21/66 ; H01L21/784 ; H01L29/06
Abstract:
A device includes a semiconductor chip. An outline of a frontside of the semiconductor chip includes at least one of a polygonal line including two line segments joined together at an inner angle of greater than 90° and an arc-shaped line.
Public/Granted literature
- US20150069394A1 Semiconductor Device and Method for Manufacturing a Semiconductor Device Public/Granted day:2015-03-12
Information query
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