Invention Grant
US09443823B2 Semiconductor device including filling material provided in space defined by three semiconductor chips
有权
半导体装置包括由三个半导体芯片限定的空间中提供的填充材料
- Patent Title: Semiconductor device including filling material provided in space defined by three semiconductor chips
- Patent Title (中): 半导体装置包括由三个半导体芯片限定的空间中提供的填充材料
-
Application No.: US14706258Application Date: 2015-05-07
-
Publication No.: US09443823B2Publication Date: 2016-09-13
- Inventor: Norio Hatakeyama
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/065 ; H01L23/31 ; H01L21/56
Abstract:
A semiconductor device comprises a wiring substrate, first and second semiconductor chips mounted on the wiring substrate so as to be spaced apart from each other, a third semiconductor chip mounted on the first and second semiconductor chips, first and second adhesive layers that are provided between the first and second semiconductor chips and the wiring substrate so as to bond the first and second semiconductor chips to the wiring substrate, and a third adhesive layer that is provided between the third semiconductor chip and the first and second semiconductor chips so as to bond the third semiconductor chip to the first and second semiconductor chips, with its thickness being made thicker than that of the first and second adhesive layers, a sealing layer covering the wiring substrate, and a filling layer that is provided between the first and second semiconductor chips and is different from the sealing layer.
Public/Granted literature
- US20150333038A1 SEMICONDUCTOR DEVICE INCLUDING FILLING MATERIAL PROVIDED IN SPACE DEFINED BY THREE SEMICONDUCTOR CHIPS Public/Granted day:2015-11-19
Information query
IPC分类:
