An electronic component includes a first transistor on a substrate. The first transistor includes a first source, a first drain, a first gate dielectric, a first gate, and a first semiconductor channel having a first length. At least a portion of the first semiconductor channel extends in a direction parallel to the substrate. A vertical-support-element on the substrate has a first reentrant profile. A second transistor includes a second source, a second drain, a second gate dielectric, and a second gate having a second semiconductor channel. At least a portion of the second semiconductor channel extends in a direction orthogonal to the substrate in the first reentrant profile of the vertical-support-element.