A ranging pixel located in a peripheral region of a solid-state image sensor includes a microlens having a center axis that is shifted relative to a center axis of the ranging pixel, a first photoelectric conversion unit, and a second photoelectric conversion unit. The first photoelectric conversion unit is disposed on a side of the center axis of the ranging pixel that is in a direction opposite to a direction (projection shift direction) obtained by projecting a shift direction of the microlens onto a straight line connecting a center of the first photoelectric conversion unit and a center of the second photoelectric conversion unit, and the second photoelectric conversion unit is disposed on another side of the center axis of the ranging pixel that is in a direction identical to the projection shift direction of the microlens. In addition, the area of the first photoelectric conversion unit is greater than the area of the second photoelectric conversion unit.