Invention Grant
US09443900B2 Pixel with multigate structure for charge storage or charge transfer
有权
具有多重结构的像素,用于电荷存储或电荷转移
- Patent Title: Pixel with multigate structure for charge storage or charge transfer
- Patent Title (中): 具有多重结构的像素,用于电荷存储或电荷转移
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Application No.: US14467412Application Date: 2014-08-25
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Publication No.: US09443900B2Publication Date: 2016-09-13
- Inventor: Yuichiro Yamashita
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
This disclosure provides an integrated circuit (IC) including one or more pixels. A photodiode is arranged in a semiconductor substrate and includes an n-type region near an upper surface of the substrate and a p-type region under the n-type region. A semiconductor fin is arranged over the photodiode and is electrically coupled to the n-type region of the photodiode. The semiconductor fin includes a transfer transistor and a separate charge storage or charge transfer region, wherein the charge storage or charge transfer region is adapted to store or transfer charge generated by the photodiode in response to impingent light.
Public/Granted literature
- US20160056201A1 PIXEL WITH MULTIGATE STRUCTURE FOR CHARGE STORAGE OR CHARGE TRANSFER Public/Granted day:2016-02-25
Information query
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