Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US14154778Application Date: 2014-01-14
-
Publication No.: US09443942B2Publication Date: 2016-09-13
- Inventor: Seiji Momota
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Rabin & Berdo, P.C.
- Priority: JP2013-015971 20130130
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L29/861 ; H01L29/06

Abstract:
A power diode is disclosed wherein it is possible to lower on-voltage by expanding a conducting region at an on time. By applying negative voltage to a plate electrode when turning on a power diode, an inversion layer is formed in a front surface layer of an n drift region sandwiched between a p guard ring region and a p anode region, and the p guard ring region and p anode region are connected by the inversion layer, thereby causing one portion or all of the p guard ring region to function as an active region together with the anode region, and expanding an energization region, thus lowering on-voltage.
Public/Granted literature
- US20140210037A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-07-31
Information query
IPC分类: