Invention Grant
US09443967B1 Semiconductor device having metal layer and method of fabricating same
有权
具有金属层的半导体器件及其制造方法
- Patent Title: Semiconductor device having metal layer and method of fabricating same
- Patent Title (中): 具有金属层的半导体器件及其制造方法
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Application No.: US14657517Application Date: 2015-03-13
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Publication No.: US09443967B1Publication Date: 2016-09-13
- Inventor: Ching-Lin Chan , Cheng-Chi Lin , Yu-Chin Chien
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner LLP
- Main IPC: H01L29/73
- IPC: H01L29/73 ; H01L29/739 ; H01L29/10 ; H01L29/06 ; H01L29/66 ; H01L29/78
Abstract:
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and formed in the substrate, a source well having the first conductivity type and formed in the high-voltage well, a source region formed in the source well, an isolation layer formed above the high-voltage well and spaced apart from the source well, a gate layer formed above the substrate and continuously extending from above an edge portion of the source well to an edge portion of the isolation layer, and a metal layer formed above the substrate and the isolation layer. The metal layer includes a first metal portion overlapping an edge portion of the gate layer and a side portion of the isolation layer, a second metal portion overlapping and conductively contacting the gate layer, and a third metal portion overlapping and conductively contacting the source region.
Public/Granted literature
- US20160268403A1 SEMICONDUCTOR DEVICE HAVING METAL LAYER AND METHOD OF FABRICATING SAME Public/Granted day:2016-09-15
Information query
IPC分类:
