Invention Grant
- Patent Title: Polycrystalline silicon rod and method for producing polysilicon
- Patent Title (中): 多晶硅棒及其制造方法
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Application No.: US14362781Application Date: 2012-12-12
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Publication No.: US09446957B2Publication Date: 2016-09-20
- Inventor: Mikhail Sofin , Erich Dornberger , Reiner Pech
- Applicant: Wacker Chemie AG
- Applicant Address: DE Munich
- Assignee: WACKER CHEMIE AG
- Current Assignee: WACKER CHEMIE AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: DE102011089449 20111221
- International Application: PCT/EP2012/075208 WO 20121212
- International Announcement: WO2013/092337 WO 20130627
- Main IPC: C01B33/029
- IPC: C01B33/029 ; C01B33/035

Abstract:
Polycrystalline silicon rods produced by the Siemens process produce a higher yield of CZ crystals when the process parameters are modified in a second stage of deposition such that an outer layer of larger crystallites having a mean swize >20 μm is produced. Harvesting of these polycrystalline rods and conventional rods by enclosing them in a plastic bag or sheath prior to removal from the reactor also surprisingly increase the yield of CZ crystals grown from a melt containing the sheathed rods.
Public/Granted literature
- US20140314654A1 POLYCRYSTALLINE SILICON ROD AND METHOD FOR PRODUCING POLYSILICON Public/Granted day:2014-10-23
Information query
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