Invention Grant
- Patent Title: Composition for forming resist underlayer film
- Patent Title (中): 用于形成抗蚀剂下层膜的组合物
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Application No.: US14669995Application Date: 2015-03-26
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Publication No.: US09447303B2Publication Date: 2016-09-20
- Inventor: Shin-ya Minegishi , Shin-ya Nakafuji , Satoru Murakami , Toru Kimura
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-220067 20100929; JP2011-208764 20110926
- Main IPC: G03F7/20
- IPC: G03F7/20 ; C09D161/14 ; H01L21/311 ; G03F7/09 ; G03F7/11 ; C08K5/42 ; C08L101/02

Abstract:
A composition for forming a resist underlayer film includes (A) a compound. The compound (A) includes a group represented by formula (1). R represents a monovalent organic group having 1 to 30 carbon atoms. The monovalent organic group represented by R does not include an oxygen atom at an end of the side adjacent the sulfur atom. * represents a bonding hand. The compound (A) preferably includes a ring which is an aromatic ring, a heteroaromatic ring, or a combination thereof. The bonding hand denoted by * in the group represented by the formula (1) is preferably linked directly or via an oxygen atom to the ring.
Public/Granted literature
- US20150197664A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM Public/Granted day:2015-07-16
Information query
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