Invention Grant
US09447303B2 Composition for forming resist underlayer film 有权
用于形成抗蚀剂下层膜的组合物

Composition for forming resist underlayer film
Abstract:
A composition for forming a resist underlayer film includes (A) a compound. The compound (A) includes a group represented by formula (1). R represents a monovalent organic group having 1 to 30 carbon atoms. The monovalent organic group represented by R does not include an oxygen atom at an end of the side adjacent the sulfur atom. * represents a bonding hand. The compound (A) preferably includes a ring which is an aromatic ring, a heteroaromatic ring, or a combination thereof. The bonding hand denoted by * in the group represented by the formula (1) is preferably linked directly or via an oxygen atom to the ring.
Public/Granted literature
Information query
Patent Agency Ranking
0/0