Invention Grant
- Patent Title: CMP polishing fluid, method for manufacturing same, method for manufacturing composite particle, and method for polishing base material
- Patent Title (中): CMP抛光液，其制造方法，复合粒子的制造方法以及基材的研磨方法
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Application No.: US13981766Application Date: 2012-01-20
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Publication No.: US09447306B2Publication Date: 2016-09-20
- Inventor: Hisataka Minami , Keisuke Inoue , Chisato Kikkawa , Yutaka Nomura , Tomohiro Iwano
- Applicant: Hisataka Minami , Keisuke Inoue , Chisato Kikkawa , Yutaka Nomura , Tomohiro Iwano
- Applicant Address: JP Tokyo
- Assignee: HITACHI CHEMICAL COMPANY, LTD.
- Current Assignee: HITACHI CHEMICAL COMPANY, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Fitch, Even, Tabin and Flannery LLP
- Priority: JP2011-012890 20110125; JP2011-098476 20110426
- International Application: PCT/JP2012/051152 WO 20120120
- International Announcement: WO2012/102187 WO 20120802
- Main IPC: C09G1/02
- IPC: C09G1/02 ; H01L21/306 ; C09K3/14 ; H01L21/3105 ; B24B37/04
Abstract:
A CMP polishing liquid comprises water and an abrasive particle, wherein the abrasive particle comprises a composite particle having a core including a first particle, and a second particle provided on the core, the first particle contains silica, the second particle contains cerium hydroxide, and the pH of the CMP polishing liquid is equal to or lower than 9.5.
Public/Granted literature
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