Invention Grant
- Patent Title: Method for manufacturing a silicon monocrystal seed and a silicon-wafer, silicon-wafer and silicon solar-cell
- Patent Title (中): 硅单晶种子和硅晶片,硅晶片和硅太阳能电池的制造方法
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Application No.: US14030469Application Date: 2013-09-18
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Publication No.: US09447516B2Publication Date: 2016-09-20
- Inventor: Andreas Krause , Juliane Walter , Lamine Sylla
- Applicant: SOLARWORLD INNOVATIONS GMBH
- Applicant Address: DE Freiberg
- Assignee: SOLARWORLD INNOVATIONS GMBH
- Current Assignee: SOLARWORLD INNOVATIONS GMBH
- Current Assignee Address: DE Freiberg
- Agency: Oliff PLC
- Priority: DE102012218229 20121005
- Main IPC: C30B11/04
- IPC: C30B11/04 ; C30B11/14 ; H01L31/0224 ; H01L31/028 ; H01L31/036 ; C30B29/06 ; H01L31/18 ; C30B13/00 ; C30B15/00

Abstract:
Within the scope of a Silicon-wafer making, in which a silicon monocrystal seed is arranged in the bottom region of a crucible, wherein the silicon monocrystal seed has a seed surface with a {110}-crystal orientation parallel to the bottom region of the crucible, in which liquid high-purity silicon is solidified, starting from the seed surface of the silicon monocrystal seed, and in which the silicon block is split into Silicon-wafers in such a manner that a wafer surface has a {100}-crystal orientation, wherein the silicon monocrystal seed is manufactured from a silicon monocrystal block, the block axis of which has a [110]-spatial orientation, wherein the silicon monocrystal block is cut-off for forming the seed surface of the silicon monocrystal seed with the {110}-crystal orientation parallel to the block axis.
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