Invention Grant
- Patent Title: Method and apparatus for producing large, single-crystals of aluminum nitride
- Patent Title (中): 用于生产大型单晶氮化铝的方法和装置
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Application No.: US14520615Application Date: 2014-10-22
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Publication No.: US09447521B2Publication Date: 2016-09-20
- Inventor: Leo Schowalter , Glen A. Slack , Juan Carlos Rojo , Robert T. Bondokov , Kenneth E. Morgan , Joseph A. Smart
- Applicant: Crystal IS, Inc.
- Applicant Address: US NY Green Island
- Assignee: Crystal IS, Inc.
- Current Assignee: Crystal IS, Inc.
- Current Assignee Address: US NY Green Island
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: B32B3/02
- IPC: B32B3/02 ; C30B25/10 ; H01L29/32 ; C30B23/02 ; C30B11/00 ; C30B23/00 ; C30B29/40 ; H01L33/00 ; H01L29/04 ; H01L29/06 ; H01L29/20 ; C30B25/16 ; H01L33/02
Abstract:
Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm−2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
Public/Granted literature
- US20150079329A1 METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE Public/Granted day:2015-03-19
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