Invention Grant
- Patent Title: Manufacturing method of semiconductor device and semiconductor manufacturing apparatus
- Patent Title (中): 半导体器件和半导体制造装置的制造方法
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Application No.: US14636081Application Date: 2015-03-02
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Publication No.: US09448065B2Publication Date: 2016-09-20
- Inventor: Shinya Fukayama , Yukifumi Oyama , Kazuhiro Murakami
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2014-187676 20140916
- Main IPC: G08B21/00
- IPC: G08B21/00 ; G01B11/26 ; H01L23/544 ; H01L25/00 ; H01L25/065 ; H01L23/00 ; H01L21/66 ; G08B21/08 ; H01L21/68 ; G01B11/27

Abstract:
A method for manufacturing a semiconductor device includes determining a position of a first semiconductor chip having a plurality of first electrodes, using one or more first alignment marks formed on the first semiconductor chip, determining a position of a second semiconductor chip having a plurality of second electrodes, using one or more second alignment marks formed on the second semiconductor chip, moving the second semiconductor chip relative to the first semiconductor chip, based on the determined positions of the first and second semiconductor chips, such that the second electrodes are aligned with the first electrodes, after said moving, stacking the second semiconductor chip on the first semiconductor chip, such that the first electrodes are electrically connected to the second electrodes, and calculating a misalignment amount between the first semiconductor chip and the second semiconductor chip stacked thereon.
Public/Granted literature
- US20160079102A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS Public/Granted day:2016-03-17
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