Invention Grant
- Patent Title: DRAM memory interface
- Patent Title (中): DRAM存储器接口
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Application No.: US14343352Application Date: 2012-09-06
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Publication No.: US09449672B2Publication Date: 2016-09-20
- Inventor: Cedric Bertholom
- Applicant: Cedric Bertholom
- Applicant Address: CH Plan-les-Ouates
- Assignee: ST-Ericsson SA
- Current Assignee: ST-Ericsson SA
- Current Assignee Address: CH Plan-les-Ouates
- Agency: Coats & Bennett, PLLC
- Priority: EP11368024 20110908; EP12305181 20120216
- International Application: PCT/EP2012/067435 WO 20120906
- International Announcement: WO2013/034650 WO 20130314
- Main IPC: G06F13/00
- IPC: G06F13/00 ; G06F13/12 ; G11C11/406 ; G11C5/06 ; G11C7/02 ; G11C7/10 ; G11C11/4093 ; G11C11/402

Abstract:
It is proposed a DRAM memory interface (40) for transmitting signals between a memory controller device (50) and a DRAM memory device (52). The DRAM memory interface comprises: data lines (44) for transmitting data signals; one or more control line(s) for transmitting control signals; one or more address line(s) for transmitting address signals; for each line, a transmitter device (41) connected to a first end of the line and a receiver device (42) connected to a second end of the line; wherein: each line is a single ended line wherein a signal transmitted on the line is referenced to a first reference voltage line (46); and—each line has an termination (Z1, Z2) on both the first and second ends of the line by connecting a first impedance (Z1) to the first end of the line and a second impedance (Z2) to the second end of the line.
Public/Granted literature
- US20140201436A1 DRAM Memory Interface Public/Granted day:2014-07-17
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