Provided is a storage control device including: a detection unit which detects a first timing for performing a first rewriting process of performing only a first operation from among the first operation and a second operation, in a memory cell array in which each bit transitions to a first storage state by the first operation and transitions to a second storage state by the second operation; and a request unit which makes a request for the first rewriting process with respect to the memory cell array, when the first timing is detected.