Invention Grant
- Patent Title: Method for setting a flash memory for HTOL testing
- Patent Title (中): HTOL测试闪存设置方法
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Application No.: US14566060Application Date: 2014-12-10
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Publication No.: US09449718B2Publication Date: 2016-09-20
- Inventor: Yipeng Chan , Kijun Kim , Guoxu Zhao , Xiao Ye , Zhen Yang
- Applicant: Semiconductor Manufacturing International (Beijing) Corporation , Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN CN
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN CN
- Agency: Innovation Counsel LLP
- Priority: CN201410195902 20140509
- Main IPC: G11C29/50
- IPC: G11C29/50 ; G11C16/30 ; G11C29/06 ; G11C29/44 ; G11C16/00
Abstract:
A method for setting voltages in a flash memory for high temperature operating life (HTOL) testing is provided. The flash memory includes a substrate, a source, and a control gate. The method includes adjusting the voltages that are applied to the source, the control gate, and the substrate, such that there is no voltage difference between the control gate and the source, and no voltage difference between the control gate and the substrate. Specifically, adjusting the voltages includes setting the voltage that is applied to the source to a ground voltage, setting the voltage that is applied to the control gate to the ground voltage, and setting the voltage that is applied to the substrate to a power supply voltage.
Public/Granted literature
- US20150325307A1 METHOD FOR SETTING A FLASH MEMORY FOR HTOL TESTING Public/Granted day:2015-11-12
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