Invention Grant
US09449797B2 Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
有权
在等离子体暴露表面上具有保护性原位形成层的等离子体处理装置的部件
- Patent Title: Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
- Patent Title (中): 在等离子体暴露表面上具有保护性原位形成层的等离子体处理装置的部件
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Application No.: US13888754Application Date: 2013-05-07
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Publication No.: US09449797B2Publication Date: 2016-09-20
- Inventor: Harmeet Singh , Thorsten Lill
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: LAM RESEARCH CORPORATION
- Current Assignee: LAM RESEARCH CORPORATION
- Current Assignee Address: US CA Fremont
- Agency: Buchanan Ingersoll & Rooney PC
- Main IPC: C23C16/50
- IPC: C23C16/50 ; C23C16/00 ; C23F1/00 ; H01L21/306 ; H01J37/32 ; H01L21/67 ; H01L21/687
Abstract:
A component of a plasma processing chamber having a protective liquid layer on a plasma exposed surface of the component. The protective liquid layer can be replenished by supplying a liquid to a liquid channel and delivering the liquid through liquid feed passages in the component. The component can be an edge ring which surrounds a semiconductor substrate supported on a substrate support in a plasma processing apparatus wherein plasma is generated and used to process the semiconductor substrate. Alternatively, the protective liquid layer can be cured or cooled sufficiently to form a solid protective layer.
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