Invention Grant
- Patent Title: Method for patterned doping of a semiconductor
- Patent Title (中): 半导体图案掺杂的方法
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Application No.: US14260514Application Date: 2014-04-24
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Publication No.: US09449824B2Publication Date: 2016-09-20
- Inventor: David H. Levy , Daniele Margadonna , Dennis Flood , Wendy G. Ahearn , Richard W. Topel, Jr. , Theodore Zubil
- Applicant: David H. Levy , Daniele Margadonna , Dennis Flood , Wendy G. Ahearn , Richard W. Topel, Jr. , Theodore Zubil
- Applicant Address: US NY Rochester
- Assignee: Natcore Technology, Inc.
- Current Assignee: Natcore Technology, Inc.
- Current Assignee Address: US NY Rochester
- Agency: Winstead PC
- Main IPC: H01L21/22
- IPC: H01L21/22 ; H01L21/38 ; H01L21/223 ; H01L31/068 ; H01L31/18
Abstract:
A method for an improved doping process allows for improved control of doping concentrations on a substrate. The method may comprise printing a polymeric material on a substrate in a desired pattern; and depositing a barrier layer on the substrate with a liquid phase deposition process, wherein a pattern of the barrier layer is defined by the polymeric material. The method further comprises removing the polymeric material, and doping the substrate. The barrier layer substantially prevents or reduces doping of the substrate to allow patterned doping regions to be formed on the substrate. The method can be repeated to allow additional doping regions to be formed on the substrate.
Public/Granted literature
- US20140322906A1 Method for Patterned Doping of a Semiconductor Public/Granted day:2014-10-30
Information query
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