Invention Grant
- Patent Title: Geometry of contact sites at brittle inorganic layers in electronic devices
- Patent Title (中): 电子器件脆性无机层接触点几何
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Application No.: US13496221Application Date: 2010-03-18
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Publication No.: US09449939B2Publication Date: 2016-09-20
- Inventor: Petrus Cornelis Paulus Bouten
- Applicant: Petrus Cornelis Paulus Bouten
- Applicant Address: NL Eindhoven
- Assignee: Koninklijke Philips N.V.
- Current Assignee: Koninklijke Philips N.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP09170517 20090917
- International Application: PCT/IB2010/051168 WO 20100318
- International Announcement: WO2011/033393 WO 20110324
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L23/00 ; H01L51/52
Abstract:
An electronic device (10, 20, 30, 40) is provided which comprises a substrate (16) supporting an inorganic layer (11) and a joint (13), mechanically coupling a contacting element (14) to the inorganic layer (11). At least a first load distributing layer (12a) is arranged in direct contact with the inorganic layer (11) at a position of the joint (13) for relieving stress caused by an elastic mismatch between the substrate (16) and the inorganic layer (11).
Public/Granted literature
- US20120175750A1 GEOMETRY OF CONTACT SITES AT BRITTLE INORGANIC LAYERS IN ELECTRONIC DEVICES Public/Granted day:2012-07-12
Information query
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