Invention Grant
- Patent Title: ESD protection circuit cell
- Patent Title (中): ESD保护电路单元
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Application No.: US13921226Application Date: 2013-06-19
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Publication No.: US09449959B2Publication Date: 2016-09-20
- Inventor: Wan-Yen Lin , Jam-Wem Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H01L27/02

Abstract:
A device includes a first bidirectional PNP circuit coupled to a first output of an communication circuit, and a second bidirectional PNP circuit coupling to a second output of the communication circuit. The first and second bi-direction PNP circuits have coupled outputs and a first breakdown voltage. A third bidirectional PNP circuit is coupled to ground via the coupled outputs of the first bidirectional PNP circuit and of the second bidirectional PNP circuit. The third bidirectional PNP circuit has a second breakdown voltage. In some arrangements, a sum of the first breakdown voltage and the second breakdown voltage exceeds 60 volts. The communication circuit can be an automotive application circuit for a serial automotive communication application. The first and second bidirectional transistor circuits can form a part of a cell of an integrated circuit having an isolation structure to sustain high voltage.
Public/Granted literature
- US20140376133A1 ESD PROTECTION CIRCUIT CELL Public/Granted day:2014-12-25
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