Invention Grant
US09449969B1 Device and method for a high isolation switch 有权
高隔离开关的装置和方法

Device and method for a high isolation switch
Abstract:
An embodiment integrated circuit includes a switch and a conductive line over the switch. The switch includes a gate, a first source/drain region at a top surface of a semiconductor substrate, and a second source/drain region at the top surface of the semiconductor substrate. The first source/drain region and the second source/drain region are disposed on opposing sides of the gate. At least a portion of the first conductive line is aligned with the gate, and the first conductive line is electrically coupled to ground.
Information query
Patent Agency Ranking
0/0