Invention Grant
- Patent Title: Device and method for a high isolation switch
- Patent Title (中): 高隔离开关的装置和方法
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Application No.: US14730018Application Date: 2015-06-03
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Publication No.: US09449969B1Publication Date: 2016-09-20
- Inventor: Kent Jaeger , Lawrence E. Connell
- Applicant: Futurewei Technologies, Inc.
- Applicant Address: US TX Plano
- Assignee: FUTUREWEI TECHNOLOGIES, INC.
- Current Assignee: FUTUREWEI TECHNOLOGIES, INC.
- Current Assignee Address: US TX Plano
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L27/088 ; H01L23/528 ; H01L21/768

Abstract:
An embodiment integrated circuit includes a switch and a conductive line over the switch. The switch includes a gate, a first source/drain region at a top surface of a semiconductor substrate, and a second source/drain region at the top surface of the semiconductor substrate. The first source/drain region and the second source/drain region are disposed on opposing sides of the gate. At least a portion of the first conductive line is aligned with the gate, and the first conductive line is electrically coupled to ground.
Information query
IPC分类: