Invention Grant
- Patent Title: Three dimensional NAND string memory devices and methods of fabrication thereof
- Patent Title (中): 三维NAND串存储器件及其制造方法
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Application No.: US14520084Application Date: 2014-10-21
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Publication No.: US09449981B2Publication Date: 2016-09-20
- Inventor: Jayavel Pachamuthu , Johann Alsmeier , Henry Chien
- Applicant: SanDisk Technologies, Inc.
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Plano
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L27/115 ; H01L29/423 ; H01L29/49 ; H01L29/788 ; H01L21/311 ; H01L21/02 ; H01L21/285 ; H01L21/28
Abstract:
A method includes forming an amorphous or polycrystalline semiconductor material over at least a portion of a sidewall of a front side opening and within front side recesses in a stack of alternating first and second material layers, forming a layer of a metal material over at least a portion of the sidewall of the front side opening and adjacent to the semiconductor material within the front side recesses; annealing the metal material and the semiconductor material within the front side recesses to form a large grain polycrystalline or single crystal semiconductor material charge storage region within each of the front side recesses by a metal induced crystallization process, and forming a tunnel dielectric layer and semiconductor channel in the front side opening. Following the metal induced crystallization process, at least a portion of the metal material is located between the charge storage regions and the second material layers.
Public/Granted literature
- US20160111434A1 THREE DIMENSIONAL NAND STRING MEMORY DEVICES AND METHODS OF FABRICATION THEREOF Public/Granted day:2016-04-21
Information query
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