Invention Grant
- Patent Title: Photodiode of high quantum efficiency
- Patent Title (中): 高量子效率的光电二极管
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Application No.: US14462724Application Date: 2014-08-19
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Publication No.: US09450000B2Publication Date: 2016-09-20
- Inventor: Michel Marty , Sebastien Jouan , Laurent Frey , Salim Boutami
- Applicant: STMicroelectronics (Crolles 2) SAS , STMicroelectronics SA , Commissariat A L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Crolles FR Montrouge FR Paris
- Assignee: STMicroelectronics (Crolles 2) SAS,STMicroelectronics SA,Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee: STMicroelectronics (Crolles 2) SAS,STMicroelectronics SA,Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Crolles FR Montrouge FR Paris
- Agency: Gardere Wynne Sewell LLP
- Priority: FR1358138 20130823
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L27/144 ; H01L31/0232 ; H01L27/146 ; H01L31/107 ; H01L29/16 ; H01L29/49 ; H01L29/66 ; H01L31/101 ; H01L31/18
Abstract:
A photodiode includes at least one central pad arranged on a light-receiving surface of a photodiode semiconductor substrate. The pad is made of a first material and includes lateral sidewalls surrounded by a spacer made of a second material having a different optical index than the first material. The lateral dimensions of the pad are smaller than an operating wavelength of the photodiode. Both the first and second materials are transparent to that operating wavelength. The pads and spacers are formed at a same time gate electrodes and sidewall spacers of MOS transistors are formed.
Public/Granted literature
- US20150054042A1 PHOTODIODE OF HIGH QUANTUM EFFICIENCY Public/Granted day:2015-02-26
Information query
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