Provided are a semiconductor device in which a solid-state image sensing element having a backside-illuminated structure and capacitor elements storing therein some of the charges supplied from light receiving elements has further improved reliability and a manufacturing method thereof. In the solid-state image sensing element of the semiconductor device, first and second substrates are joined together at a junction surface. The first substrate is formed with photodiodes. The second substrate is formed with the capacitor elements. The photodiodes and the capacitor elements are placed to be opposed to each other. In the first substrate, first coupling portions for coupling to the second substrate are placed. In the second substrate, second coupling portions for coupling to the first substrate are placed. A first gap portion between the first coupling portions and a second gap portion between the second coupling portions are placed to overlap a first light blocking film.