Invention Grant
- Patent Title: Semiconductor light emitting device and method of fabricating the same
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US12666228Application Date: 2008-06-18
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Publication No.: US09450017B2Publication Date: 2016-09-20
- Inventor: Jae Cheon Han
- Applicant: Jae Cheon Han
- Applicant Address: KR Seoul
- Assignee: LG INNOTEK CO., LTD.
- Current Assignee: LG INNOTEK CO., LTD.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2007-0060931 20070621
- International Application: PCT/KR2008/003438 WO 20080618
- International Announcement: WO2008/156294 WO 20081224
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L27/15 ; H01L33/08 ; H01L33/38
Abstract:
A semiconductor light emitting device comprises a first electrode contacting layer, a first active layer on the first electrode contacting layer, a second electrode contacting layer on the first active layer, a second active layer on the second electrode contacting layer, and a third electrode contacting layer on the second active layer.
Public/Granted literature
- US20100320491A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2010-12-23
Information query
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