Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14160189Application Date: 2014-01-21
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Publication No.: US09450059B2Publication Date: 2016-09-20
- Inventor: Satoshi Inaba
- Applicant: Satoshi Inaba
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L27/108 ; H01L29/94 ; H01L29/423 ; H01L27/24 ; H01L21/265 ; H01L21/28 ; H01L29/66 ; H01L21/306 ; H01L21/3065 ; H01L27/22
Abstract:
According to one embodiment, a semiconductor device includes a semiconductor substrate with a groove for forming an embedded gate therein, and a gate electrode embedded via a gate insulator film in the groove. A portion of the semiconductor substrate near the gate electrode is doped with a chemical element which is inactive in the semiconductor substrate.
Public/Granted literature
- US20150069317A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-03-12
Information query
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